Invention Application
- Patent Title: METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Patent Title (中): 制造半导体器件的方法
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Application No.: US15075128Application Date: 2016-03-19
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Publication No.: US20160204082A1Publication Date: 2016-07-14
- Inventor: Michiaki Sugiyama , Nobuhiro Kinoshita
- Applicant: Renesas Electronics Corporation
- Priority: JP2012-190993 20120831
- Main IPC: H01L25/065
- IPC: H01L25/065

Abstract:
In a semiconductor device formed by mounting a chip laminate including a semiconductor chip having a small diameter and a semiconductor chip having a large diameter over the top surface of a substrate, an excessive stress is prevented from being added to a joint of the two semiconductor chips. By mounting a first semiconductor chip having a large diameter over a support substrate and thereafter mounting a second semiconductor chip having a small diameter over the first semiconductor chip, it is possible to: suppress the inclination and unsteadiness of the second semiconductor chip mounted over the first semiconductor chip; and hence inhibit an excessive stress from being added to a joint of the first semiconductor chip and the second semiconductor chip.
Public/Granted literature
- US09640414B2 Method of manufacturing semiconductor device Public/Granted day:2017-05-02
Information query
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