Invention Application
- Patent Title: SELECTIVE EPITAXIALLY GROWN III-V MATERIALS BASED DEVICES
- Patent Title (中): 选择性外形III-V材料的设备
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Application No.: US14778574Application Date: 2013-06-28
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Publication No.: US20160204208A1Publication Date: 2016-07-14
- Inventor: Niti GOEL , Gilbert DEWEY , Niloy MUKHERJEE , Matthew V. METZ , Marko RADOSAVLJEVIC , Benjamin CHU-KUNG , Jack T. KAVALIEROS , Robert S. CHAU
- Applicant: Intel Corporation
- International Application: PCT/US2013/048743 WO 20130628
- Main IPC: H01L29/205
- IPC: H01L29/205 ; H01L29/06 ; H01L29/78 ; H01L21/02 ; H01L29/66
Abstract:
A first III-V material based buffer layer is deposited on a silicon substrate. A second III-V material based buffer layer is deposited onto the first III-V material based buffer layer. A III-V material based device channel layer is deposited on the second III-V material based buffer layer.
Public/Granted literature
- US09640622B2 Selective epitaxially grown III-V materials based devices Public/Granted day:2017-05-02
Information query
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