Invention Application
- Patent Title: CHARGE PUMP WITH SWITCHING GATE BIAS
- Patent Title (中): 充气泵与开关门偏置
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Application No.: US14617025Application Date: 2015-02-09
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Publication No.: US20160233763A1Publication Date: 2016-08-11
- Inventor: Dongmin Park , Lai Kan Leung , Jong Min Park
- Applicant: QUALCOMM Incorporated
- Main IPC: H02M3/07
- IPC: H02M3/07 ; H03L7/099 ; H03L7/093

Abstract:
An apparatus including: a current source configured to generate current; a bias node coupled to the current source; a switching current source circuit coupled to the current source and the bias node to allow the current to flow through the switching current source circuit into the bias node; a biasing circuit configured to receive a control signal from a phase detector, and mirror the current flowing through the switching current source circuit in response to the control signal; and a switch device disposed between the switching current source circuit and the biasing circuit to isolate the switching current source circuit from the biasing circuit.
Public/Granted literature
- US09490696B2 Charge pump with switching gate bias Public/Granted day:2016-11-08
Information query
IPC分类: