Invention Application
US20160240232A1 SEMICONDUCTOR DEVICE HAVING HIGH-VOLTAGE TRANSISTOR 有权
具有高压晶体管的半导体器件

  • Patent Title: SEMICONDUCTOR DEVICE HAVING HIGH-VOLTAGE TRANSISTOR
  • Patent Title (中): 具有高压晶体管的半导体器件
  • Application No.: US15138998
    Application Date: 2016-04-26
  • Publication No.: US20160240232A1
    Publication Date: 2016-08-18
  • Inventor: Dong Hwan LEE
  • Applicant: SK hynix Inc.
  • Assignee: SK hynix Inc.
  • Current Assignee: SK hynix Inc.
  • Priority: KR10-2011-0139986 20111222
  • Main IPC: G11C7/10
  • IPC: G11C7/10
SEMICONDUCTOR DEVICE HAVING HIGH-VOLTAGE TRANSISTOR
Abstract:
A semiconductor device includes a semiconductor device, comprising a memory cell array including a plurality of memory cells connected to a first bit line and a second bit line, respectively, a page buffer group, and bit line selection circuits including a plurality of selection circuit blocks to connect the first bit lines or the second bit lines to the page buffer group, wherein each of the selection circuit blocks includes a first contact region and a second contact region to which the first and second bit lines coupled, and same bit lines of the first and second bit lines are coupled to contact regions adjacent to one another of the first and second contact regions included in bit line selection circuits adjacent to one another of the bit line selection circuits.
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