Invention Application
- Patent Title: Processing of Semiconductor Devices
- Patent Title (中): 半导体器件的处理
-
Application No.: US14624205Application Date: 2015-02-17
-
Publication No.: US20160240366A1Publication Date: 2016-08-18
- Inventor: Manfred Engelhardt , Hannes Eder
- Applicant: INFINEON TECHNOLOGIES AG
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L21/324 ; H01L21/66 ; H01L21/3065
Abstract:
A method of thinning a wafer includes thinning the wafer using a grinding process. The wafer, after the grinding processing, has a first non-uniformity in thickness. The thinned wafer is etched using a plasma process. The wafer after the etching processing has a second non-uniformity in thickness. The second non-uniformity is less than the first non-uniformity.
Information query
IPC分类:
