发明申请
US20160268174A1 Methods for Probing Semiconductor Fins and Determining Carrier Concentrations
审中-公开
探测半导体芯片和确定载流子浓度的方法
- 专利标题： Methods for Probing Semiconductor Fins and Determining Carrier Concentrations
- 专利标题（中）： 探测半导体芯片和确定载流子浓度的方法
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申请号： US15162320申请日： 2016-05-23
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公开(公告)号： US20160268174A1公开(公告)日： 2016-09-15
- 发明人: Clement Hsingjen Wann , Yasutoshi Okuno , Ling-Yen Yeh , Chi-Yuan Shih , Yuan-Fu Shao , Wei-Chun Tsai
- 申请人： Taiwan Semiconductor Manufacturing Company, Ltd.
- 主分类号： H01L21/66
- IPC分类号： H01L21/66 ; H01L29/06 ; H01L29/66 ; H01L21/306
摘要：
A method includes probing at least one semiconductor fin using a four-point probe head, with four probe pins of the four-point probe head contacting the at least one semiconductor fin. A resistance of the at least one semiconductor fin is calculated. A carrier concentration of the semiconductor fin is calculated from the resistance.
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