Invention Application
- Patent Title: PULSED PLASMA FOR FILM DEPOSITION
- Patent Title (中): 脉冲沉积的脉冲等离子体
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Application No.: US15073444Application Date: 2016-03-17
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Publication No.: US20160276150A1Publication Date: 2016-09-22
- Inventor: Jun Xue , Ludovic Godet , Srinivas Nemani , Michael W. Stowell , Qiwei Liang , Douglas A. Buchberger
- Applicant: APPLIED MATERIALS, INC.
- Main IPC: H01L21/02
- IPC: H01L21/02

Abstract:
Methods of processing a substrate are provided herein. In some embodiments, a method of processing a substrate disposed in a processing chamber includes: (a) depositing a layer of material on a substrate by exposing the substrate to a first reactive species generated from a remote plasma source and to a first precursor, wherein the first reactive species reacts with the first precursor; and (b) treating all, or substantially all, of the deposited layer of material by exposing the substrate to a plasma generated within the processing chamber from a second plasma source; wherein at least one of the remote plasma source or the second plasma source is pulsed to control periods of depositing and periods of treating.
Public/Granted literature
- US10096466B2 Pulsed plasma for film deposition Public/Granted day:2018-10-09
Information query
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