Invention Application
- Patent Title: METHOD AND STRUCTURE OF MAKING ENHANCED UTBB FDSOI DEVICES
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Application No.: US15169473Application Date: 2016-05-31
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Publication No.: US20160276479A1Publication Date: 2016-09-22
- Inventor: Qing LIU , Thomas SKOTNICKI
- Applicant: STMICROELECTRONICS, INC. , STMICROELECTRONICS (CROLLES 2) SAS
- Main IPC: H01L29/78
- IPC: H01L29/78 ; H01L29/423 ; H01L29/06 ; H01L27/12
Abstract:
An integrated circuit die includes a substrate having a first layer of semiconductor material, a layer of dielectric material on the first layer of semiconductor material, and a second layer of semiconductor material on the layer of dielectric material. An extended channel region of a transistor is positioned in the second layer of semiconductor material, interacting with a top surface, side surfaces, and potentially portions of a bottom surface of the second layer of semiconductor material. A gate dielectric is positioned on a top surface and on the exposed side surface of the second layer of semiconductor material. A gate electrode is positioned on the top surface and the exposed side surface of the second layer of semiconductor material.
Public/Granted literature
- US09666670B2 Method and structure of making enhanced UTBB FDSOI devices Public/Granted day:2017-05-30
Information query
IPC分类:
