Invention Application
- Patent Title: TRANSISTOR AND DISPLAY DEVICE
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Application No.: US15171292Application Date: 2016-06-02
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Publication No.: US20160284865A1Publication Date: 2016-09-29
- Inventor: Shunpei YAMAZAKI , Toshinari SASAKI , Junichiro SAKATA , Masashi TSUBUKU
- Applicant: Semiconductor Energy Laboratory Co., Ltd.
- Priority: JP2009-204801 20090904
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L27/12 ; H01L29/24 ; H01L29/423
Abstract:
It is an object to manufacture a highly reliable display device using a thin film transistor having favorable electric characteristics and high reliability as a switching element. In a bottom gate thin film transistor including an amorphous oxide semiconductor, an oxide conductive layer having a crystal region is formed between an oxide semiconductor layer which has been dehydrated or dehydrogenated by heat treatment and each of a source electrode layer and a drain electrode layer which are formed using a metal material. Accordingly, contact resistance between the oxide semiconductor layer and each of the source electrode layer and the drain electrode layer can be reduced; thus, a thin film transistor having favorable electric characteristics and a highly reliable display device using the thin film transistor can be provided.
Public/Granted literature
- US09640670B2 Transistors in display device Public/Granted day:2017-05-02
Information query
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