发明申请
- 专利标题： METHODS OF ETCHBACK PROFILE TUNING
- 专利标题（中）： 蚀刻轮廓调谐方法
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申请号： US15091951申请日： 2016-04-06
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公开(公告)号： US20160300731A1公开(公告)日： 2016-10-13
- 发明人: KAI WU , VIKASH BANTHIA
- 申请人： APPLIED MATERIALS, INC.
- 主分类号： H01L21/3213
- IPC分类号： H01L21/3213 ; H01L21/3205 ; H01L21/768
摘要：
A method of controlling an etch profile includes introducing a tungsten containing gas into a processing chamber; depositing a first tungsten film lining sidewalls of a feature formed in a substrate using the tungsten containing gas in the processing chamber; and treating the first tungsten film in the processing chamber using the tungsten containing gas until a particular etch profile is attained by repeatedly alternating between etching the first tungsten film for a first interval and stopping the etching of the first tungsten film for a second interval by at least one of purging the tungsten containing gas from the process chamber or turning off a power supply that powers the etching of the first tungsten film.
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