Invention Application
US20160305823A1 THz RADIATION DETECTION IN STANDARD CMOS TECHNOLOGIES BASED ON THERMIONIC EMISSION
有权
基于THERMIONIC排放的标准CMOS技术中的太赫兹辐射检测
- Patent Title: THz RADIATION DETECTION IN STANDARD CMOS TECHNOLOGIES BASED ON THERMIONIC EMISSION
- Patent Title (中): 基于THERMIONIC排放的标准CMOS技术中的太赫兹辐射检测
-
Application No.: US15067521Application Date: 2016-03-11
-
Publication No.: US20160305823A1Publication Date: 2016-10-20
- Inventor: Zeljko IGNJATOVIC , Hanan DERY
- Applicant: University of Rochester
- Main IPC: G01J5/08
- IPC: G01J5/08 ; G01J5/22 ; H01L31/112
Abstract:
A detector of terahertz (THz) energy includes a MOSFET having an extended source region, and a channel region depleted of free carriers, which MOSFET operates in a sub-threshold voltage state and has an output that is an exponential function of THz energy supplied to the gate.
Public/Granted literature
- US09574945B2 THz radiation detection in standard CMOS technologies based on thermionic emission Public/Granted day:2017-02-21
Information query
