发明申请
US20160308014A1 FABRICATION OF CHANNEL WRAPAROUND GATE STRUCTURE FOR FIELD-EFFECT TRANSISTOR
审中-公开
用于场效应晶体管的通道封口结构的制造
- 专利标题： FABRICATION OF CHANNEL WRAPAROUND GATE STRUCTURE FOR FIELD-EFFECT TRANSISTOR
- 专利标题（中）： 用于场效应晶体管的通道封口结构的制造
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申请号： US15197563申请日： 2016-06-29
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公开(公告)号： US20160308014A1公开(公告)日： 2016-10-20
- 发明人: Marko Radosavljevic , Amlan Majumdar , Suman Datta , Jack T. Kavalieros , Brian S. Doyle , Justin K. Brask , Robert S. Chau
- 申请人： Marko Radosavljevic , Amlan Majumdar , Suman Datta , Jack T. Kavalieros , Brian S. Doyle , Justin K. Brask , Robert S. Chau
- 主分类号： H01L29/423
- IPC分类号： H01L29/423 ; H01L29/66 ; H01L29/06 ; H01L29/786
摘要：
A method for fabricating a field-effect transistor with a gate completely wrapping around a channel region is described. Ion implantation is used to make the oxide beneath the channel region of the transistor more etchable, thereby allowing the oxide to be removed below the channel region. Atomic layer deposition is used to form a gate dielectric and a metal gate entirely around the channel region once the oxide is removed below the channel region.
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