A method of manufacturing a Schottky barrier diode is provided, which includes: providing a semiconductor substrate including a first well region of a first conductivity type in the semiconductor substrate; forming a surface-doped layer having a dopant of a second conductivity type opposite to the first conductivity type in the first well region; forming a dielectric layer in contact with the surface-doped layer; performing a thermal treatment on the surface-doped layer to move the dopant of the surface-doped layer in the dielectric layer; removing the dielectric layer to expose the first well region; and forming a silicide layer in contact with the exposed first well region. A Schottky barrier diode is also provided.