发明申请
- 专利标题： VIA FORMATION USING SIDEWALL IMAGE TRANSFER PROCESS TO DEFINE LATERAL DIMENSION
- 专利标题（中）： 通过使用边框图像转移过程来形成侧向尺寸
-
申请号： US14710894申请日： 2015-05-13
-
公开(公告)号： US20160336225A1公开(公告)日： 2016-11-17
- 发明人: Shyng-Tsong Chen , Cheng Chi , Chi-Chun Liu , Sylvie M. Mignot , Yann A. Mignot , Hosadurga K. Shobha , Terry A. Spooner , Wenhui Wang , Yongan Xu
- 申请人： International Business Machines Corporation , GLOBALFOUNDRIES, INC. , STMicroelectronics, Inc.
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/528 ; H01L23/535
摘要：
A method of forming a via to an underlying layer of a semiconductor device is provided. The method may include forming a pillar over the underlying layer using a sidewall image transfer process. A dielectric layer is formed over the pillar and the underlying layer; and a via mask patterned over the dielectric layer, the via mask having a mask opening at least partially overlapping the pillar. A via opening is etched in the dielectric layer using the via mask, the mask opening defining a first lateral dimension of the via opening in a first direction and the pillar defining a second lateral dimension of the via opening in a second direction different than the first direction. The via opening is filled with a conductor to form the via. A semiconductor device and via structure are also provided.
公开/授权文献
信息查询
IPC分类:
