Invention Application
- Patent Title: SEMICONDUCTOR DEVICE AND STRUCTURE
- Patent Title (中): 半导体器件和结构
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Application No.: US15134897Application Date: 2016-04-21
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Publication No.: US20160336316A1Publication Date: 2016-11-17
- Inventor: Yiwei CHEN
- Applicant: MediaTek Inc.
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L27/02

Abstract:
A semiconductor device is provided. Gates of first PMOS and NMOS transistors are coupled together for receiving an input signal. Gates of second PMOS and NMOS transistors are coupled together. Gates of third PMOS and NMOS transistors are coupled together. Gates of fourth PMOS and NMOS transistors are coupled together. Drains of fourth PMOS and NMOS transistors are coupled together for providing an output signal. When the first, second, third and fourth NMOS transistors are connected in parallel and the first, second, third and fourth PMOS transistors are connected in parallel, the output signal is provided according to the input signal and a first logic function. When the first and second NMOS transistors are connected in serial and the first and second PMOS transistors are connected in serial, the output signal is provided according to the input signal and a second logic function.
Public/Granted literature
- US10177147B2 Semiconductor device and structure Public/Granted day:2019-01-08
Information query
IPC分类: