Invention Application
US20160336319A1 DUAL NITRIDE STRESSOR FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
审中-公开
用于半导体器件的双硝酸盐压电元件及其制造方法
- Patent Title: DUAL NITRIDE STRESSOR FOR SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING
- Patent Title (中): 用于半导体器件的双硝酸盐压电元件及其制造方法
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Application No.: US14714229Application Date: 2015-05-15
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Publication No.: US20160336319A1Publication Date: 2016-11-17
- Inventor: Yu-Lin YANG , Chia-Cheng HO , Chih Chieh YEH , Cheng-Yi PENG , Tsung-Lin LEE
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Main IPC: H01L27/092
- IPC: H01L27/092 ; H01L29/267 ; H01L21/02 ; H01L21/8238 ; H01L29/66 ; H01L29/165 ; H01L29/78
Abstract:
A method for manufacturing a semiconductor device includes forming a fin structure over a substrate and forming a first gate structure over a first portion of the fin structure. A first nitride layer is formed over a second portion of the fin structure. The first nitride layer is exposed to ultraviolet radiation. Source/drain regions are formed at the second portion of the fin structure.
Public/Granted literature
- US10483262B2 Dual nitride stressor for semiconductor device and method of manufacturing Public/Granted day:2019-11-19
Information query
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