Invention Application
- Patent Title: MODIFICATION PROCESSING METHOD AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
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Application No.: US15232260Application Date: 2016-08-09
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Publication No.: US20160351390A1Publication Date: 2016-12-01
- Inventor: Tamotsu MORIMOTO , Yusuke MURAKI , Kazuaki NISHIMURA
- Applicant: TOKYO ELECTRON LIMITED
- Priority: JP2014-118271 20140609
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L29/66
Abstract:
A modification processing method includes preparing a substrate having a silicon layer on which a damage layer is formed through plasma processing. The method further includes removing the damage layer formed on the silicon layer by processing the substrate with a first process gas containing a fluorine gas.
Public/Granted literature
- US09911596B2 Modification processing method and method of manufacturing semiconductor device Public/Granted day:2018-03-06
Information query
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