发明申请
US20160351415A1 SEMICONDUCTOR SUBSTRATE FOR FLASH LAMP ANNEAL, ANNEAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
审中-公开
用于闪光灯罩，半导体器件的半导体衬底，半导体器件和制造半导体器件的方法
- 专利标题： SEMICONDUCTOR SUBSTRATE FOR FLASH LAMP ANNEAL, ANNEAL SUBSTRATE, SEMICONDUCTOR DEVICE, AND METHOD FOR MANUFACTURING SEMICONDUCTOR DEVICE
- 专利标题（中）： 用于闪光灯罩，半导体器件的半导体衬底，半导体器件和制造半导体器件的方法
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申请号： US15117269申请日： 2015-01-26
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公开(公告)号： US20160351415A1公开(公告)日： 2016-12-01
- 发明人: Tsuyoshi OHTSUKI , Hiroshi TAKENO
- 申请人： Shin-Etsu Handotai Co., Ltd.
- 申请人地址： JP Tokyo
- 专利权人： SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人： SHIN-ETSU HANDOTAI CO., LTD.
- 当前专利权人地址： JP Tokyo
- 优先权： JP2014-035156 20140226
- 国际申请： PCT/JP2015/000319 WO 20150126
- 主分类号： H01L21/324
- IPC分类号： H01L21/324 ; H01L29/36 ; H01L29/32 ; H01L21/265 ; H01L21/268
摘要：
A semiconductor substrate for flash lamp anneal is used in a manufacturing process of performing ion implantation to form a p-n junction on a semiconductor substrate surface and recovering an ion implantation defect by the flash lamp anneal, carbon concentration of the semiconductor substrate being 0.5 ppma or less. Consequently, it is possible to provide the semiconductor substrate for flash lamp anneal which can easily and surely prevent the ion implantation defect from remaining in a device using a flash lamp anneal process.
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