Invention Application
US20160351675A1 INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS HAVING REPLACEMENT METAL GATE ELECTRODES
审中-公开
集成电路和方法制备具有更换金属栅极电极的集成电路
- Patent Title: INTEGRATED CIRCUITS AND METHODS FOR FABRICATING INTEGRATED CIRCUITS HAVING REPLACEMENT METAL GATE ELECTRODES
- Patent Title (中): 集成电路和方法制备具有更换金属栅极电极的集成电路
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Application No.: US14721822Application Date: 2015-05-26
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Publication No.: US20160351675A1Publication Date: 2016-12-01
- Inventor: Suraj K. Patil , Mitsuhiro Togo
- Applicant: GLOBALFOUNDRIES, Inc.
- Main IPC: H01L29/423
- IPC: H01L29/423 ; H01L29/49 ; H01L27/092 ; H01L29/66 ; H01L21/8238 ; H01L21/225
Abstract:
Integrated circuits and methods for fabricating integrated circuits are provided. In an exemplary embodiment, a method for fabricating integrated circuits includes defining a pFET region and an nFET region of a semiconductor substrate. The method deposits a first work function material including tungsten and nitride over the pFET region and the nFET region of the semiconductor substrate. The method includes selectively modifying the first work function material in a selected region. Further, the method includes depositing a metal fill over the first work function material in the pFET region and the nFET region of the semiconductor substrate.
Information query
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