Invention Application
US20160351685A1 METHOD OF FORMING METAL CONTACTS IN THE BARRIER LAYER OF A GROUP III-N HEMT
审中-公开
在III-N型HEMT的障碍层中形成金属接触的方法
- Patent Title: METHOD OF FORMING METAL CONTACTS IN THE BARRIER LAYER OF A GROUP III-N HEMT
- Patent Title (中): 在III-N型HEMT的障碍层中形成金属接触的方法
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Application No.: US15237041Application Date: 2016-08-15
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Publication No.: US20160351685A1Publication Date: 2016-12-01
- Inventor: Yoshikazu Kondo , Shoji Wada , Hiroshi Yamasaki , Masahiro Iwamoto
- Applicant: Texas Instruments Incorporated
- Main IPC: H01L29/66
- IPC: H01L29/66 ; H01L29/20 ; H01L29/45 ; H01L21/306 ; H01L29/417
Abstract:
Metal contact openings are etched in the barrier layer of a group III-N HEMT with a first gas combination that etches down into the barrier layer, and a second gas combination that etches further down into the barrier layer to a depth that lies above the top surface of a channel layer that touches and lies below the barrier layer.
Public/Granted literature
- US09818839B2 Method of forming metal contacts in the barrier layer of a group III-N HEMT Public/Granted day:2017-11-14
Information query
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