FIELD-EFFECT TRANSISTORS WITH BODY DROPDOWNS

Invention Application

US20160351699A1 FIELD-EFFECT TRANSISTORS WITH BODY DROPDOWNS 审中-公开

Title translation: 具有身体倾向的场效应晶体管

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Patent Title: FIELD-EFFECT TRANSISTORS WITH BODY DROPDOWNS
Patent Title (中): 具有身体倾向的场效应晶体管
Application No.: US14721648

Application Date: 2015-05-26
Publication No.: US20160351699A1

Publication Date: 2016-12-01
Inventor: Priscilla Boos , Arjan Mels
Applicant: NXP B.V.
Main IPC: H01L29/78
IPC: H01L29/78 ; H01L29/423 ; H01L29/40 ; H01L29/10 ; H01L29/06

FIELD-EFFECT TRANSISTORS WITH BODY DROPDOWNS

Abstract:

A field-effect transistor (FET) includes, a first drain, a second drain, a body and a gate region. The gate region has a length, and is configured and arranged to create, in response to a gate voltage, a channel that is in the body, between the first and second drains, and along the length of the gate region. A plurality of body dropdowns are located in the gate region and are spaced along a width of the gate region. Each of the body dropdowns are configured and arranged to provide an electrical contact to the body for biasing purposes.

Abstract(Chinese):

场效应晶体管（FET）包括第一漏极，第二漏极，主体和栅极区域。栅极区域具有长度，并且被配置和布置成响应于栅极电压而产生在主体中，在第一和第二漏极之间以及沿着栅极区域的长度的沟道。多个主体下拉位于栅极区域中并且沿着栅极区域的宽度间隔开。每个身体下拉装置被构造和布置成为身体提供用于偏压目的的电接触。

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IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/68	..只能通过对一个不通有待整流、放大或切换的电流的电极供给电流或施加电位方可进行控制的（H01L29/96优先）
H01L29/76	...单极器件
H01L29/772	....场效应晶体管
H01L29/78	.....由绝缘栅产生场效应的