Invention Application
- Patent Title: Ferroelectric Memory Expansion for Firmware Updates
- Patent Title (中): 铁电内存扩展用于固件更新
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Application No.: US15139865Application Date: 2016-04-27
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Publication No.: US20160358640A1Publication Date: 2016-12-08
- Inventor: Ralf Brederlow , Oscar Miguel Guillen-Hernandez , Peter Wongeun Chung
- Applicant: Texas Instruments Deutschland GmbH , Texas Instruments Incorporated
- Main IPC: G11C11/22
- IPC: G11C11/22 ; G06F9/445

Abstract:
An integrated circuit including a ferroelectric random access memory (FRAM) for storing firmware, and a method of updating that firmware. The FRAM is constructed to selectively operate as a 2T2C FRAM memory in a normal operating mode, and as a 1T1C FRAM memory in an update mode. Updating of the stored firmware is performed by placing the FRAM in its update (1T1C) mode and writing the updated code into alternate rows of the 1T1C half-cells at each of a plurality of memory locations, while the other 1T1C half-cells in the other alternate rows retain the original data. Following verification of the updated contents, the original data in the other half-cells are overwritten with the verified updated data, and the operating mode is changed back to the normal (2T2C) operating mode.
Public/Granted literature
- US10120674B2 Ferroelectric memory expansion for firmware updates Public/Granted day:2018-11-06
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