Invention Application
US20160372316A1 STRUCTURE AND METHOD FOR TUNABLE MEMORY CELLS INCLUDING FIN FIELD EFFECT TRANSISTORS
有权
包含Fin场效应晶体管的TUNABLE MEMORY CELL的结构和方法
- Patent Title: STRUCTURE AND METHOD FOR TUNABLE MEMORY CELLS INCLUDING FIN FIELD EFFECT TRANSISTORS
- Patent Title (中): 包含Fin场效应晶体管的TUNABLE MEMORY CELL的结构和方法
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Application No.: US14746606Application Date: 2015-06-22
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Publication No.: US20160372316A1Publication Date: 2016-12-22
- Inventor: Haining Yang , Yanxiang Liu
- Applicant: QUALCOMM Incorporated
- Main IPC: H01L21/02
- IPC: H01L21/02 ; H01L27/02 ; G05B19/418 ; H01L27/11
Abstract:
In a particular aspect, an integrated circuit includes a first gate structure coupled to a first fin field effect transistor (FinFET) device. The integrated circuit includes a second gate structure coupled to a second FinFET device. The first gate structure and the second gate structure are separated by a dielectric region. The integrated circuit further includes a metal contact having a first surface that is in contact with the dielectric region, the first gate structure, and the second gate structure.
Public/Granted literature
- US09653281B2 Structure and method for tunable memory cells including fin field effect transistors Public/Granted day:2017-05-16
Information query
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