Invention Application
US20160379916A1 METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH SIDEWALL RECESS AND RELATED DEVICES
有权
用于制造具有边框接合的半导体器件的方法和相关器件
- Patent Title: METHOD FOR MAKING SEMICONDUCTOR DEVICE WITH SIDEWALL RECESS AND RELATED DEVICES
- Patent Title (中): 用于制造具有边框接合的半导体器件的方法和相关器件
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Application No.: US14753365Application Date: 2015-06-29
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Publication No.: US20160379916A1Publication Date: 2016-12-29
- Inventor: Jefferson TALLEDO
- Applicant: STMICROELECTRONICS, INC.
- Main IPC: H01L23/495
- IPC: H01L23/495 ; H01L23/498 ; H01L23/00 ; H01L23/31 ; H01L21/56 ; H01L21/78
Abstract:
A method is for making a semiconductor device. The method may include providing a lead frame having a recess, forming a sacrificial material in the recess of the lead frame, and mounting an IC on the lead frame. The method may include encapsulating the IC and the lead frame, removing portions of the lead frame to define lead frame contacts for the IC, and removing the sacrificial material to define for each lead frame contact a solder anchoring tab extending outwardly at a lower region and defining a sidewall recess between opposing portions of the solder anchoring tab and the encapsulation material.
Public/Granted literature
- US10008472B2 Method for making semiconductor device with sidewall recess and related devices Public/Granted day:2018-06-26
Information query
IPC分类:
