Invention Application
- Patent Title: THIN FILM TRANSISTOR AND THIN FILM TRANSISTOR SUBSTRATE INCLUDING THE SAME
- Patent Title (中): 薄膜晶体管和薄膜晶体管衬底,包括它们
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Application No.: US14989923Application Date: 2016-01-07
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Publication No.: US20160380064A1Publication Date: 2016-12-29
- Inventor: Junhyun Park , Sunghwan Kim , Seyoung Song , Kyoungju Shin
- Applicant: Samsung Display Co., Ltd.
- Priority: KR10-2015-0090492 20150625
- Main IPC: H01L29/417
- IPC: H01L29/417 ; H01L29/786 ; H01L29/10 ; H01L27/12

Abstract:
A thin film transistor substrate includes: a substrate; and a thin film transistor including a gate electrode on the substrate, an active layer on the gate electrode, and a source electrode and a drain electrode on the active layer. Within the thin film transistor, at least one of the source electrode and the drain electrode defines a plurality of branch electrodes thereof and a main electrode to which the plurality of branch electrodes is commonly connected. Each of the plurality of branch electrodes overlaps the gate electrode.
Public/Granted literature
- US09799740B2 Thin film transistor and thin film transistor substrate including the same Public/Granted day:2017-10-24
Information query
IPC分类: