发明申请
- 专利标题： ETCHING TECHNIQUES FOR SEMICONDUCTOR DEVICES
- 专利标题（中）： 半导体器件的蚀刻技术
-
申请号： US14751095申请日： 2015-06-25
-
公开(公告)号： US20160380122A1公开(公告)日： 2016-12-29
- 发明人: Robert Woehl , David Aaron Randolph Barkhouse , Paul Loscutoff
- 申请人： Robert Woehl , David Aaron Randolph Barkhouse , Paul Loscutoff
- 主分类号： H01L31/02
- IPC分类号： H01L31/02 ; H01L21/3213 ; H01L31/18
摘要：
Fabricating a semiconductor device can include forming a metal seed region over a substrate. The method can include forming a mask over a first portion of the metal seed region. The method can also include forming a metal region over the metal seed region and removing the mask. The method can include forming metal contact fingers on the semiconductor device, where the forming includes etching the first portion of the metal seed region with an etchant comprising an acid, an oxidizer and chloride ions.
公开/授权文献
- US09768327B2 Etching techniques for semiconductor devices 公开/授权日：2017-09-19
信息查询
IPC分类:
