A method and apparatus are provided for using SPR to detect buried voids in a semiconductor wafer inline post metal deposition. Embodiments include forming a first, a second, and a third metal structure in a first, a second, and a third adjacent die of a wafer; performing a SPR on the first, second, and third metal structures inline; detecting a first, a second, and a third SPR wavelength corresponding to the first, second, and third metal structures, respectively; comparing a difference between the first SPR wavelength and the second SPR wavelength and a difference between the third SPR wavelength and the first SPR wavelength against a threshold value; and determining a presence or an absence of a buried void in the first metal structure based on the comparison.