Invention Application
- Patent Title: METAL REMOVAL WITH REDUCED SURFACE ROUGHNESS
- Patent Title (中): 金属去除与减少的表面粗糙度
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Application No.: US14801542Application Date: 2015-07-16
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Publication No.: US20170018439A1Publication Date: 2017-01-19
- Inventor: Xikun Wang , David Cui , Anchuan Wang , Nitin K. Ingle
- Applicant: Applied Materials, Inc.
- Applicant Address: US CA Santa Clara
- Assignee: Applied Materials, Inc.
- Current Assignee: Applied Materials, Inc.
- Current Assignee Address: US CA Santa Clara
- Main IPC: H01L21/3213
- IPC: H01L21/3213 ; H01L21/768

Abstract:
Methods are described for etching metal layers that are difficult to volatize, such as cobalt, nickel, and platinum to form an etched metal layer with reduced surface roughness. The methods include pretreating the metal layer with a local plasma formed from a hydrogen-containing precursor. The pretreated metal layer is then reacted with a halogen-containing precursor to form a halogenated metal layer having a halogenated etch product. A carbon-and-nitrogen-containing precursor reacts with the halogenated etch product to form a volatile etch product that can be removed in the gas phase from the etched surface of the metal layer. The surface roughness may be reduced by performing one or more plasma treatments on the etching metal layer after a plurality of etching sequences. Surface roughness is also reduced by controlling the temperature and length of time the metal layer is reacting with the etchant precursors.
Public/Granted literature
- US09659791B2 Metal removal with reduced surface roughness Public/Granted day:2017-05-23
Information query
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