Invention Application
US20170025280A1 FORMATION OF BORON-DOPED TITANIUM METAL FILMS WITH HIGH WORK FUNCTION
审中-公开
形成具有高功函数的硼掺杂钛金属膜
- Patent Title: FORMATION OF BORON-DOPED TITANIUM METAL FILMS WITH HIGH WORK FUNCTION
- Patent Title (中): 形成具有高功函数的硼掺杂钛金属膜
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Application No.: US14808979Application Date: 2015-07-24
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Publication No.: US20170025280A1Publication Date: 2017-01-26
- Inventor: Robert Brennan Milligan
- Applicant: ASM IP Holding B.V.
- Main IPC: H01L21/285
- IPC: H01L21/285
Abstract:
A method for forming a Boron doped metallic film, such as Titanium Boron Nitride, is disclosed. The method allows for creation of the metallic film with a high work function and low resistivity, while limiting the increase in effective oxide thickness. The method comprises a thin metallic layer deposition step as well as a Boron-based gas pulse step. The Boron-based gas pulse deposits Boron and allows for the removal of excess halogens within the metallic film. The steps may be repeated in order to achieve a desired thickness of the metallic film.
Public/Granted literature
- US10083836B2 Formation of boron-doped titanium metal films with high work function Public/Granted day:2018-09-25
Information query
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