Invention Application
- Patent Title: Array Of Cross Point Memory Cells
- Patent Title (中): 交叉点存储单元阵列
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Application No.: US14808959Application Date: 2015-07-24
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Publication No.: US20170025474A1Publication Date: 2017-01-26
- Inventor: Scott E. Sills , Durai Vishak Nirmal Ramaswamy , Alessandro Calderoni
- Applicant: Micron Technology, Inc.
- Main IPC: H01L27/24
- IPC: H01L27/24 ; H01L45/00
Abstract:
An array of cross point memory cells comprises spaced first lines which cross spaced second lines. Two memory cells are individually between one of two immediately adjacent of the second lines and a same single one of the first lines.
Public/Granted literature
- US10134982B2 Array of cross point memory cells Public/Granted day:2018-11-20
Information query
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