Invention Application
- Patent Title: LIGHT EMITTING DIODE WITH HIGH EFFICIENCY
- Patent Title (中): 发光二极管效率高
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Application No.: US15288043Application Date: 2016-10-07
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Publication No.: US20170025571A1Publication Date: 2017-01-26
- Inventor: Tae Gyun KIM , Joon Hee Lee , Ki Hyun Kim , Sung Su Son
- Applicant: Seoul Viosys Co., Ltd.
- Priority: KR10-2015-0071906 20150522; KR10-2016-0048327 20160420
- Main IPC: H01L33/14
- IPC: H01L33/14 ; H01L33/10 ; H01L33/38

Abstract:
A light emitting diode includes a light emitting structure including first and second conductive type semiconductor layers, an active layer, a first electrode electrically connected to the first conductive type semiconductor layer, a current blocking layer disposed on a lower surface of the light emitting structure, and a second electrode electrically connected to the second conductive type semiconductor layer. The second electrode includes a first reflective metal layer adjoining the second conductive type semiconductor layer, and a second reflective metal layer covering a lower surface of the current blocking layer and a lower surface of the first reflective metal layer, and adjoining the second conductive type semiconductor layer. A contact resistance between the second reflective metal layer and the second conductive type semiconductor layer is higher than a contact resistance between the first reflective metal layer and the second conductive type semiconductor layer.
Public/Granted literature
- US09960318B2 Light emitting diode with high efficiency Public/Granted day:2018-05-01
Information query
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