Invention Application
- Patent Title: METHOD FOR FORMING FIELD EFFECT TRANSISTORS
- Patent Title (中): 形成场效应晶体管的方法
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Application No.: US15252586Application Date: 2016-08-31
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Publication No.: US20170040224A1Publication Date: 2017-02-09
- Inventor: Rama Kambhampati , Junli Wang , Ruilong Xie , Tenko Yamashita
- Applicant: International Business Machines Corporation , GlobalFoundries, Inc.
- Main IPC: H01L21/8238
- IPC: H01L21/8238 ; H01L29/66
Abstract:
A method for forming field effect transistors comprises forming a first dummy gate stack over a first fin, forming a second dummy gate stack over a second fin, depositing a first layer of spacer material on the first dummy gate stack, the first fin, the second dummy gate stack, and the second fin, patterning a first masking layer on the first dummy gate stack and the first fin, etching to remove portions of the first layer of spacer material and form a spacer adjacent to the second dummy gate stack, removing the first masking layer, epitaxially growing a silicon material on the second fin, depositing a layer of oxide material on the first layer of spacer material, the first epitaxial material and the second dummy gate stack, and depositing a second layer of spacer material on the layer of oxide material.
Public/Granted literature
- US09607903B2 Method for forming field effect transistors Public/Granted day:2017-03-28
Information query
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