Invention Application
- Patent Title: THIN FILM TRANSISTOR, MANUFACTURING METHOD THEREOF, ARRAY SUBSTRATE, AND DISPLAY DEVICE
- Patent Title (中): 薄膜晶体管,其制造方法,阵列基板和显示器件
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Application No.: US14913048Application Date: 2015-07-20
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Publication No.: US20170040464A1Publication Date: 2017-02-09
- Inventor: Hongwei Tian , Yanan Niu , Zuqiang Wang , Liang Sun
- Applicant: BOE TECHNOLOGY GROUP CO., LTD.
- Priority: CN201510158315.3 20150403
- International Application: PCT/CN2015/084439 WO 20150720
- Main IPC: H01L29/786
- IPC: H01L29/786 ; H01L21/02 ; H01L27/12 ; H01L21/306 ; H01L21/225 ; H01L29/10 ; H01L29/66 ; H01L21/30

Abstract:
Embodiments of the present invention disclose a manufacturing method of a thin film transistor, a thin film transistor, an array substrate and a display device. The manufacturing method of a thin film transistor includes a step of forming an active layer, and the step of forming an active layer includes: forming a first poly-silicon layer and a second poly-silicon layer on the first poly-silicon layer separately, and adding dopant ions into the second poly-silicon layer and an upper surface layer of the first poly-silicon layer. By using the manufacturing method of a thin film transistor, defect states and unstable factors of interface in the thin film transistor can be reduced, thereby improving stability of the LTPS thin film transistor and obtaining an array substrate and a display device having more stable performance.
Public/Granted literature
- US09768312B2 Thin film transistor, manufacturing method thereof, array substrate, and display device Public/Granted day:2017-09-19
Information query
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