发明申请
- 专利标题: UNIAXIALLY STRAINED NANOWIRE STRUCTURE
- 专利标题(中): 单一应变纳米结构
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申请号: US15339620申请日: 2016-10-31
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公开(公告)号: US20170047405A1公开(公告)日: 2017-02-16
- 发明人: Stephen M. Cea , Seiyon Kim , Annalisa Cappellani
- 申请人: Stephen M. Cea , Seiyon Kim , Annalisa Cappellani
- 主分类号: H01L29/10
- IPC分类号: H01L29/10 ; H01L29/66 ; H01L29/786 ; H01L29/06 ; H01L29/423
摘要:
Uniaxially strained nanowire structures are described. For example, a semiconductor device includes a plurality of vertically stacked uniaxially strained nanowires disposed above a substrate. Each of the uniaxially strained nanowires includes a discrete channel region disposed in the uniaxially strained nanowire. The discrete channel region has a current flow direction along the direction of the uniaxial strain. Source and drain regions are disposed in the nanowire, on either side of the discrete channel region. A gate electrode stack completely surrounds the discrete channel regions.
公开/授权文献
- US09905650B2 Uniaxially strained nanowire structure 公开/授权日:2018-02-27