Invention Application
- Patent Title: Fluxgate-based Current Sensor
- Patent Title (中): 基于磁通门的电流传感器
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Application No.: US14986121Application Date: 2015-12-31
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Publication No.: US20170059627A1Publication Date: 2017-03-02
- Inventor: Arup Polley , Srinath Ramaswamy , Terry Lee Sculley
- Applicant: Texas Instruments Incorporated
- Main IPC: G01R15/18
- IPC: G01R15/18 ; G01R19/00

Abstract:
Operating a current sensor by conducting a current serially through a first region and a second region of an electrically conductive member. A first magnetic field produced by the current in the first region is sensed using a first magnetic field based current (MFBC) sensor having a first sensitivity. The sensitivity of a second MFBC is reduced. A second magnetic field produced by the current in the second region is sensed using the second MFBC sensor having a reduced sensitivity, in which the reduced sensitivity is lower than the first sensitivity. A magnitude of the current is calculated based on the first magnetic field and the second magnetic field. A dynamic range of the current sensor is extended by calculating a magnitude of the current using the second magnetic field after the first MFBC is saturated.
Public/Granted literature
- US09778288B2 Fluxgate-based current sensor Public/Granted day:2017-10-03
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