发明申请
US20170068173A1 Metrology Method and Apparatus, Substrate, Lithographic System and Device Manufacturing Method
有权
计量方法与仪器,基板,平版印刷系统及器件制造方法
- 专利标题: Metrology Method and Apparatus, Substrate, Lithographic System and Device Manufacturing Method
- 专利标题(中): 计量方法与仪器,基板,平版印刷系统及器件制造方法
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申请号: US15355334申请日: 2016-11-18
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公开(公告)号: US20170068173A1公开(公告)日: 2017-03-09
- 发明人: Martin Jacobus Johan JAK , Armand Eugene Albert KOOLEN , Hendrik Jan Hidde SMILDE
- 申请人: ASML Netherlands B.V.
- 申请人地址: NL Veldhoven
- 专利权人: ASML Netherlands B.V.
- 当前专利权人: ASML Netherlands B.V.
- 当前专利权人地址: NL Veldhoven
- 主分类号: G03F7/20
- IPC分类号: G03F7/20
摘要:
A metrology target formed by a lithographic process on a substrate includes a plurality of component gratings. Images of the target are formed using +1 and −1 orders of radiation diffracted by the component gratings. Regions of interest (ROIs) in the detected image are identified corresponding the component gratings. Intensity values within each ROI are processed and compared between images, to obtain a measurement of asymmetry and hence overlay error. Separation zones are formed between the component gratings and design so as to provide dark regions in the image. In an embodiment, the ROIs are selected with their boundaries falling within the image regions corresponding to the separation zones. By this measure, the asymmetry measurement is made more tolerant of variations in the position of the ROI. The dark regions also assist in recognition of the target in the images.
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