Invention Application
US20170068173A1 Metrology Method and Apparatus, Substrate, Lithographic System and Device Manufacturing Method
有权
计量方法与仪器,基板,平版印刷系统及器件制造方法
- Patent Title: Metrology Method and Apparatus, Substrate, Lithographic System and Device Manufacturing Method
- Patent Title (中): 计量方法与仪器,基板,平版印刷系统及器件制造方法
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Application No.: US15355334Application Date: 2016-11-18
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Publication No.: US20170068173A1Publication Date: 2017-03-09
- Inventor: Martin Jacobus Johan JAK , Armand Eugene Albert KOOLEN , Hendrik Jan Hidde SMILDE
- Applicant: ASML Netherlands B.V.
- Applicant Address: NL Veldhoven
- Assignee: ASML Netherlands B.V.
- Current Assignee: ASML Netherlands B.V.
- Current Assignee Address: NL Veldhoven
- Main IPC: G03F7/20
- IPC: G03F7/20

Abstract:
A metrology target formed by a lithographic process on a substrate includes a plurality of component gratings. Images of the target are formed using +1 and −1 orders of radiation diffracted by the component gratings. Regions of interest (ROIs) in the detected image are identified corresponding the component gratings. Intensity values within each ROI are processed and compared between images, to obtain a measurement of asymmetry and hence overlay error. Separation zones are formed between the component gratings and design so as to provide dark regions in the image. In an embodiment, the ROIs are selected with their boundaries falling within the image regions corresponding to the separation zones. By this measure, the asymmetry measurement is made more tolerant of variations in the position of the ROI. The dark regions also assist in recognition of the target in the images.
Public/Granted literature
- US09811003B2 Metrology method and apparatus, substrate, lithographic system and device manufacturing method Public/Granted day:2017-11-07
Information query
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