Invention Application
US20170069574A1 SEMICONDUCTOR DEVICE ALLOWING METAL LAYER ROUTING FORMED DIRECTLY UNDER METAL PAD
有权
允许直接在金属垫下形成的金属层布线的半导体器件
- Patent Title: SEMICONDUCTOR DEVICE ALLOWING METAL LAYER ROUTING FORMED DIRECTLY UNDER METAL PAD
- Patent Title (中): 允许直接在金属垫下形成的金属层布线的半导体器件
-
Application No.: US15356680Application Date: 2016-11-21
-
Publication No.: US20170069574A1Publication Date: 2017-03-09
- Inventor: Chun-Liang Chen
- Applicant: MEDIATEK INC.
- Main IPC: H01L23/528
- IPC: H01L23/528 ; H01L23/485 ; H01L23/522
Abstract:
A semiconductor device may include a metal pad and a first specific metal layer routing. The metal pad is positioned on a first metal layer of the semiconductor device and is directly contacting the first metal layer. The first specific metal layer routing is formed on a second metal layer of the semiconductor device and under the metal pad. In addition, the semiconductor device may include at least one via plug for connecting the first specific metal layer routing to at least one metal region in the first metal layer, where the aforementioned at least one via plug is formed directly under the metal pad.
Public/Granted literature
- US09824971B2 Semiconductor device allowing metal layer routing formed directly under metal pad Public/Granted day:2017-11-21
Information query
IPC分类:
