Invention Application
- Patent Title: METAL THIN FILM RESISTOR AND PROCESS
- Patent Title (中): 金属薄膜电阻和工艺
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Application No.: US15357796Application Date: 2016-11-21
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Publication No.: US20170069708A1Publication Date: 2017-03-09
- Inventor: Abbas Ali , Eric Beach
- Applicant: Texas Instruments Incorporated
- Main IPC: H01L49/02
- IPC: H01L49/02 ; H01L23/528 ; H01L23/532 ; H01L23/522
Abstract:
An integrated circuit with a metal thin film resistor with an overlying etch stop layer. A process for forming a metal thin film resistor in an integrated circuit with the addition of one lithography step.
Public/Granted literature
- US10177214B2 Metal thin film resistor and process Public/Granted day:2019-01-08
Information query
IPC分类:
