Invention Application
- Patent Title: Capacitive force sensor and method for preparing the same
- Patent Title (中): 电容力传感器及其制备方法
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Application No.: US15216821Application Date: 2016-07-22
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Publication No.: US20170075467A1Publication Date: 2017-03-16
- Inventor: Heesuk KIM , Jong Ho KIM , Sang-Soo LEE , Yon Kyu PARK , Min-Seok KIM
- Applicant: KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY , KOREA RESEARCH INSTITUTE OF STANDARDS AND SCIENCE
- Priority: KR10-2015-0128893 20150911
- Main IPC: G06F3/041
- IPC: G06F3/041 ; G06F3/044 ; G01L1/14

Abstract:
The present disclosure relates to a force sensor including a first substrate, a first electrode installed in a pattern on an upper surface of the first substrate, a second substrate disposed above and spaced apart from the first substrate, a second electrode installed in a pattern on a lower surface of the second substrate, facing the first electrode, and a dielectric interposed between the first substrate and the second substrate, wherein the dielectric includes a first dielectric surrounding an outside of the second electrode, and a pressure rib connecting the first dielectric to the first electrode, and a method for preparing the same, and shows a remarkably superior effect to related art, in terms of capacitance, interactivity and durability.
Public/Granted literature
- US09965077B2 Capacitive force sensor and method for preparing the same Public/Granted day:2018-05-08
Information query