Invention Application
US20170077375A1 THERMOELECTRIC MATERIAL, METHOD FOR FABRICATING THE SAME, AND THERMOELECTRIC ELEMENT USING THE SAME
审中-公开
热电材料，其制造方法和使用该热电材料的热电元件
- Patent Title: THERMOELECTRIC MATERIAL, METHOD FOR FABRICATING THE SAME, AND THERMOELECTRIC ELEMENT USING THE SAME
- Patent Title (中): 热电材料，其制造方法和使用该热电材料的热电元件
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Application No.: US15267128Application Date: 2016-09-15
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Publication No.: US20170077375A1Publication Date: 2017-03-16
- Inventor: Seungeon MOON , Junsoo KIM , SEUNG MIN LEE
- Applicant: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Applicant Address: KR Daejeon
- Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee: ELECTRONICS AND TELECOMMUNICATIONS RESEARCH INSTITUTE
- Current Assignee Address: KR Daejeon
- Priority: KR10-2015-0131093 20150916; KR10-2016-0045083 20160412
- Main IPC: H01L35/22
- IPC: H01L35/22 ; H01L35/34
Abstract:
Provided is a thermoelectric material including a metal silicide film, and silicon particles dispersed in the metal silicide film, the total volume of the silicon particles being greater than the volume of the metal silicide film.
Information query
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