发明申请
- 专利标题： METHOD AND APPARATUS FOR MANUFACTURING SEMICONDUCTOR ELEMENTS
- 专利标题（中）： 制造半导体元件的方法和装置
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申请号： US15258191申请日： 2016-09-07
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公开(公告)号： US20170077433A1公开(公告)日： 2017-03-16
- 发明人: Takeshi GOTANDA , Shigehiko MORI , Akihiro MATSUI , Haruhi OOOKA
- 申请人： Kabushiki Kaisha Toshiba
- 申请人地址： JP Minato-ku
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JP Minato-ku
- 优先权： JP2015-182262 20150915
- 主分类号： H01L51/44
- IPC分类号： H01L51/44 ; H01L51/00 ; H01L51/52 ; H01L51/42 ; H01L51/56
摘要：
The embodiment provides a method and an apparatus for manufacturing a semiconductor element showing high conversion efficiency and having a perovskite structure. The embodiment is a method for manufacturing a semiconductor element comprising an active layer having a perovskite structure. Said active layer is produced by the steps of: forming a coating film by directly or indirectly coating a first or second electrode with a coating solution containing a precursor compound for the perovskite structure and an organic solvent capable of dissolving said precursor compound; and then starting to blow a gas onto said coating film before formation reaction of the perovskite structure is completed in said coating film. Another embodiment is an apparatus for manufacturing a semiconductor element according to the above method.