Invention Application
- Patent Title: SEMICONDUCTOR DEVICE WITH REDUCED LEAKAGE CURRENT AND FABRICATING METHOD THEREOF
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Application No.: US14857657Application Date: 2015-09-17
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Publication No.: US20170084657A1Publication Date: 2017-03-23
- Inventor: Chia-Yu WEI , Hsin-Chi CHEN , Ssu-Chiang WENG , Yung-Lung HSU , Yen-Liang LIN , Chin-Hsun HSIAO
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Main IPC: H01L27/146
- IPC: H01L27/146
Abstract:
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device includes a substrate, a light sensing feature, a negative oxide layer, a gate dielectric layer and a transfer gate. The light sensing feature is configured in the substrate to detect an incoming radiation. The negative oxide layer is over the light sensing feature. The gate dielectric layer is over the negative oxide layer. The transfer gate is over the gate dielectric layer.
Public/Granted literature
- US09893107B2 Semiconductor device with reduced leakage current and fabricating method thereof Public/Granted day:2018-02-13
Information query
IPC分类:
