发明申请
- 专利标题： Content Addressable Memory Device Having Electrically Floating Body Transistor
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申请号： US14867308申请日： 2015-09-28
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公开(公告)号： US20170092359A1公开(公告)日： 2017-03-30
- 发明人: Benjamin S. Louie , Jin-Woo Han , Yuniarto Widjaja
- 申请人： Zeno Semiconductor, Inc.
- 主分类号： G11C15/04
- IPC分类号： G11C15/04 ; H01L27/108
摘要：
A content addressable memory cell includes a first floating body transistor and a second floating body transistor. The first floating body transistor and the second floating body transistor are electrically connected in series through a common node. The first floating body transistor and the second floating body transistor store complementary data.
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