Invention Application
- Patent Title: SEMICONDUCTOR STRUCTURE AND METHOD FOR FORMING THE SAME
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Application No.: US15158517Application Date: 2016-05-18
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Publication No.: US20170110466A1Publication Date: 2017-04-20
- Inventor: Chiang-Ming CHUANG , Chien-Hsuan LIU , Chih-Ming LEE , Kun-Tsang CHUANG , Hung-Che LIAO , Hsin-Chi CHEN
- Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Applicant Address: TW HSINCHU
- Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
- Current Assignee Address: TW HSINCHU
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/06 ; H01L29/423 ; H01L23/535
Abstract:
A semiconductor structure includes a semiconductor substrate, at least one raised dummy feature, at least one memory cell, and at least one word line. The raised dummy feature is present on the semiconductor substrate and defines a cell region on the semiconductor substrate. The memory cell is present on the cell region. The word line is present adjacent to the memory cell.
Public/Granted literature
- US09768182B2 Semiconductor structure and method for forming the same Public/Granted day:2017-09-19
Information query
IPC分类:
