Invention Application
- Patent Title: SEMICONDUCTOR STRUCTURE AND MANUFACTURING METHOD THEREOF
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Application No.: US14950424Application Date: 2015-11-24
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Publication No.: US20170110469A1Publication Date: 2017-04-20
- Inventor: Liang Yi , Ko-Chi Chen , Shen-De Wang
- Applicant: UNITED MICROELECTRONICS CORP.
- Priority: TW104133857 20151015
- Main IPC: H01L27/115
- IPC: H01L27/115 ; H01L29/423

Abstract:
A semiconductor structure and a manufacturing method thereof are provided. The semiconductor structure includes a semiconductor substrate, a non-volatile memory cell, and a gate stack. The non-volatile memory cell is formed in the semiconductor substrate, and a top surface of the non-volatile memory cell is coplanar with or below a top surface of the semiconductor substrate. The gate stack is formed on the semiconductor substrate.
Public/Granted literature
- US09966383B2 Semiconductor structure and manufacturing method thereof Public/Granted day:2018-05-08
Information query
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