Invention Application
- Patent Title: N-DOPED NANOCARBON MATERIALS AND METHOD FOR MANUFACTURING THE SAME
-
Application No.: US15297653Application Date: 2016-10-19
-
Publication No.: US20170110672A1Publication Date: 2017-04-20
- Inventor: Sukang BAE , Byung Joon MOON , Ye Lin OH , Dongheon SHIN , Sang Jin KIM , Sang Hyun LEE , Tae-Wook KIM , Dong Su LEE , Min PARK
- Applicant: Korea Institute of Science and Technology
- Applicant Address: KR Seoul
- Assignee: Korea Institute of Science and Technology
- Current Assignee: Korea Institute of Science and Technology
- Current Assignee Address: KR Seoul
- Priority: KR10-2015-0146186 20151020; KR10-2016-0109301 20160826
- Main IPC: H01L51/00
- IPC: H01L51/00 ; C07D471/22 ; H01L31/0352

Abstract:
Provided are nitrogen-doped carbon quantum dots as pyrolysis product of fumaronitrile. The carbon quantum dots may be formed in such a manner that nitrogen may be doped in an amount of 3-10 wt % based on the total weight of the carbon quantum dots with no need for a separate doping process. As a result, the carbon quantum dots have excellent properties, such as optical property, electroconductivity and thermal safety, and thus may be useful for photocatalysts or organic solar cells, or the like.
Public/Granted literature
- US09647219B1 N-doped nanocarbon materials and method for manufacturing the same Public/Granted day:2017-05-09
Information query
IPC分类: