• Patent Title: BINARY PATTERNING FOR THREE-DIMENSIONAL MEMORY FORMATION
  • Application No.: US14948407
    Application Date: 2015-11-23
  • Publication No.: US20170147730A1
    Publication Date: 2017-05-25
  • Inventor: Assaf Shappir
  • Applicant: Apple Inc.
  • Main IPC: G06F17/50
  • IPC: G06F17/50 H01L27/115
BINARY PATTERNING FOR THREE-DIMENSIONAL MEMORY FORMATION
Abstract:
A method for designing a patterning process for a three-dimensional (3D) memory includes defining a target 3D structure of the 3D memory, to be applied in a periodic structure of layers on a substrate. The target 3D structure is converted into a sequence of multiple steps, each step specifying a respective pattern to be removed and a respective number of the layers to be removed from the periodic structure under the respective pattern. The sequence of steps is sent to one or more manufacturing tools.
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