An aim of the present invention is to make it possible to achieve stable operation of thin film transistors in an imaging panel of an X-ray imaging system that uses an indirect conversion scheme. An imaging panel includes a substrate, thin film transistor, photoelectric conversion element, and bias wiring line. The thin film transistor is formed on the substrate. The photoelectric conversion element is connected to the thin film transistor and irradiated by scintillation light. The bias wiring line is connected to the photoelectric conversion element and applies a reverse bias voltage to the photoelectric conversion element. The thin film transistor includes a semiconductor active layer and a gate electrode. The gate electrode is formed between the substrate and semiconductor active layer. The bias wiring line includes a portion that overlaps the gate electrode and semiconductor active layer as seen from the radiation direction of the scintillation light.