A plasma processing apparatus includes a process chamber, and a susceptor provided in the process chamber and having a substrate receiving area formed in a top surface thereof. A first plasma generator is configured to perform a first plasma process on a first predetermined area in the substrate receiving area. A first radio frequency power source is connected to the first plasma generator and configured to supply first radio frequency power to the first plasma generator. A second plasma generator is configured to perform a second plasma process on a second predetermined area in the substrate receiving area and to be able to change the second predetermined area. A second radio frequency power source is connected to the second plasma generator and configured to supply second radio frequency power to the second plasma generator.