- 专利标题: DIGITAL ALLOY GERMANIUM HETEROJUNCTION SOLAR CELL
-
申请号: US14978469申请日: 2015-12-22
-
公开(公告)号: US20170179316A1公开(公告)日: 2017-06-22
- 发明人: Karthik Balakrishnan , Stephen W. Bedell , Pouya Hashemi , Bahman Hekmatshoartabari , Alexander Reznicek
- 申请人: INTERNATIONAL BUSINESS MACHINES CORPORATION
- 主分类号: H01L31/0352
- IPC分类号: H01L31/0352 ; H01L31/18 ; H01L31/20 ; H01L31/0747
摘要:
A photovoltaic device includes a digital alloy buffer layer including a plurality of alternating layers of semiconductor material. An absorption layer epitaxially is grown on the digital alloy buffer layer, an intrinsic layer is formed on the absorption layer and a doped layer is formed on the intrinsic layer. A conductive contact is formed on the doped layer.
公开/授权文献
- US10170660B2 Digital alloy germanium heterojunction solar cell 公开/授权日:2019-01-01